MPIF1030 Series

CLASSIFICATION
DIMENSIONS
环保
DRAWING
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PARAMETER

1. Dimensions (unit:mm)


series

A

B

C

D

E

a

(typ)

b

(typ)

c

(typ)

MPIF1030

11.10±0.40

10.0±0.30

3.00MAX

3.00±0.50

2.00±0.50

5.40

13.60

4.10








  By Dimensional diagram


2.Features


  • High rated current
  • Frequency up to 3MHz
  • 125℃maximum total temperature operation
  • Low core loss
  • Ultra low buzz noise due to molding construction
  • Halogen Free & ROHS compliant

3.Applications

  • DC/DC converters in distributed power systems.

  • DC/DC converter for Field Programmable Gate Array(FPGA).

  • Battery powered devices.

  • Thin type on-board power supply module for exchanger.

  • VRM for server.

  • High current, low profile POL converters.

  • PDA/notebook/desktop/server and battery powered devices.
4.Part Number System
    MPIF   XXXX - XXX    M
       1         2           3      4

   1.SERIES NAME 
   2.DIMENSIONS   (0420~1770)
   3.Inductance Value
   4.Inductance Tolerance   ( M= ± 20% )


5.Electrical Characteristics


Part No.

Inductance

DC

Resistance

Saturation Current

Heating Rating

Current

L0 (μH)

DCR (mΩ)

Isat (A)

Irms (A)

±20 %, 100 kHz, 1V

MAX

MAX(TYP)

MAX(TYP)

MPIF1030-R22M-XS

0.22

1.20

44.24(50.0)

29.20(33.0)

MPIF1030-R33M-XS

0.33

1.60

28.3(32.0)

20.35(23.0)

MPIF1030-R36M-XS

0.36

1.60

24.8(28.0)

20.35(23.0)

MPIF1030-R47M-XS

0.47

2.50

23.0(26.0)

19.47(22.0)

MPIF1030-R82M-XS

0.82

3.70

20.35(23.0)

15.93(18.0)

MPIF1030-1R0M-XS

1.00

6.00

18.58(21.0)

13.27(15.0)

MPIF1030-1R5M-XS

1.50

7.50

17.69(20.0)

11.50(13.0)

MPIF1030-2R2M-XS

2.20

9.00

12.38(14.0)

9.73(11.0)

MPIF1030-3R3M-XS

3.30

16.0

10.61(12.0)

7.96(9.00)

MPIF1030-4R7M-XS

4.70

22.5

8.84(10.0)

6.19(7.00)

MPIF1030-8R2M-XS

8.20

45.0

6.20(7.00)

4.42(5.00)

MPIF1030-100M-XS

10.0

55.0

5.75(6.50)

3.98(4.50)

MPIF1030-330M-XS

33.0

160

3.53(4.00)

2.30(2.60)


1.All test data is referenced to 25 °C ambient
2.Operating temperature range -55 °C to +125°C
3.Irms (A):DC current (A) that will cause an MPIF proximate ΔT of 40°C(reference ambient temperature is 25°C)
4.Isat(A):DC current (A) that will cause L0 to drop MPIF proximately 30%
5.The part temperature (ambient + temp rise) should not exceed 125°C under worst case operating conditions.Circuit design, component placement, PWB trace size and thickness, airflow and other cooling provisions all affect the part temperature. Part temperature should be verified in the end MPIF plication.
6.Absolute maximum voltage 30VDC